报告人：Dr. LEO LORENZ(IEEE- Fellow and Member of German Academy of Science)from ECPE/ Infineon Technologies

 

时间：2017年10月26日（周四）下午14:30-16:00    地点：信息大楼D529

 

内容：The main challenge in Power Electronics System and Power Device development is directed by a simultaneous increase in Power Density, Efficiency and Reliability. Elevated power density and efficiency will be achieved by new developments on Si-devices and components based on wide Bandgap material, advanced packaging technologies and future power circuit topologies as well as switching strategies.

The main part of the presentation is demonstrating the development trends of power semiconductor devices based on Si and Wide Bandgap material.The contents will includean advanced chip interfacing and packaging technology, new device structures, embedded power integration on chip, etc.And the main research directions for power electronic systems thatECPE/ Infineon Technologies are following in Europe will be highlighted and briefly discussed.

 

报告人简介：Dr. LEO LORENZ received the M.Eng. degree from Univ. of Berlin Germany in 1976 and the PhD. degree (first class Hons.) from University of Munich in 1984 (Germany).

He is currently Technology Advisor for New Power Semiconductor Devices at Infineon Technologies Munich. Besides his work in industry, he is an Honorable/Adjunct Professor at several Universities in Germany and Worldwide.

He is one of the Key Founder of ECPE (European Center of Power Electronics) and since the foundation in 2003 President of this organization.He owns an IEEE- Fellowship since 2006 and is a Member of German Academy of Science since 2005.

He has published more than 400 Journal/conference papers with a high citation rate and is the owner of many basic patents. He gave more than 80 key note presentations at high level Summits and Conferences and received several times the Best Paper Award at IEEE Conferences.

 

欢迎信息工程学院的教师和学生们参加！

 

来源：电气工程研究所